Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Applied Physics Letters

Volumn 70, Issue 23, 1997, Pages 3134-3136

  Zou, J ^a   Cockayne, D J H ^a   Russell Harriott, J J ^b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005210573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119112     Document Type: Article

References (32)

1. F. C. Frank and J. H. van der Merwe, Proc. R. Soc. London, Sci. A 198, 205 (1949).
2. J. W. Matthews, Philos. Mag. 13, 1207 (1966).
3. J. W. Matthews and W. A. Jesser, Acta Metall. 15, 595 (1967).
4. J. Zou, D. J. H. Cockayne, and B. F. Usher, J. Appl. Phys. 73, 619 (1993).
5. J. Zou, D. J. H. Cockayne, and B. F. Usher, Appl. Phys. Lett. 68, 673 (1996).
6. G. R. Brooker, J. M. Titchmarsh, J. Fletcher, D. B. Darby, M. Hockly, and M. Al-Jassim, J. Cryst. Growth 45, 407 (1978).
7. D. J. Eaglesham, D. M. Maher, E. P. Kvam, J. C. Bean, and C. J. Humphreys, Phys. Rev. Lett. 62, 187 (1989).
8. C. G. Tuppen and C. J. Gibbings, Thin Solid Films 183, 133 (1989).
9. C. G. Tuppen, C. J. Gibbings, and M. Hockly, J. Cryst. Growth 94, 392 (1989).
10. D. D. Perovic, G. C. Weatherly, J.-M. Baribeau, and D. C. Houghton, Thin Solid Films 183, 141 (1993).
11. V. Higgs, P. Kightley, P. J. Goodhew, and P. D. Augustus, Appl. Phys. Lett. 59, 829 (1991).
12. F. K. LeGoues, J. A. Ott, K. Eberl, and S. S. Iyer, Appl. Phys. Lett. 61, 174 (1992).
13. D. D. Perovic, D. C. Houghton, J.-P. Noël, and N. L. Rowell, J. Vac. Sci. Technol. B 11, 889 (1993).
14. H. Park, K. H. Lee, J. K. Lee, Y. T. Lee, E. Lee, J. Y. Lee, S. K. Hong, and O. Kwon, J. Appl. Phys. 72, 4063 (1992).
15. S. Mader and A. E. Blakeslee, IBM J. Res. Devel. 19, 151 (1975).
16. W. Hagen and H. Strunk, Appl. Phys. 17, 85 (1978).
17. C. G. Tuppen, C. J. Gibbings, M. Hockly, and S. G. Roberts, Appl. Phys. Lett. 56, 54 (1990).
18. J. Washburn and F. P. Kvam, Appl. Phys. Lett. 57, 1637 (1990).
19. A. Lefebvre, C. Herbeaux, C. Bouillet, and J. Di Persio, Philos. Mag. Lett. 63, 23 (1991).
20. M. A. Capano, Phys. Rev. B 45, 11 768 (1992).
21. R. Beanland, J. Appl. Phys. 72, 4031 (1992); 77, 6217 (1995).
22. R. Beanland, J. Appl. Phys. 72, 4031 (1992); 77, 6217 (1995).
23. S. Y. Shiryaev, Philos. Mag. Lett. 68, 195 (1993).
24. J. Zou, B. F. Usher, D. J. H. Cockayne, and R. Glaisher, J. Electron. Mater. 20, 855 (1991).
25. C. E. C. Wood, L. Rathbun, H. Ohno, and D. DeSimone, J. Cryst. Growth 51, 299 (1981).
26. S. L. Weng, J. Vac. Sci. Technol. B 5, 725 (1987).
27. Y. G. Chai and R. Chow, Appl. Phys. Lett. 38, 796 (1981).
28. G. D. Pettit, J. M. Woodall, S. L. Wright, P. D. Kirchner, and J. L. Freeouf, J. Vac. Sci. Technol. B 2, 241 (1984).
29. M. Bafleur, A. Munoz-Yague, and A. Rocher, J. Cryst. Growth 59, 531 (1982).
30. S. L. Weng, C. Webb, Y. G. Chai, and S. G. Bandy, Appl. Phys. Lett. 47, 391 (1985).
31. G. J. Gibbings, C. G. Tuppen, and M. Hockly, Appl. Phys. Lett. 54, 148 (1989).
32. J. Wang, J. W. Steeds, and D. I. Westwood, Phys. Status Solidi 138, 431 (1993).