Silicon material thermal treatment process. Evaluation of residence time

High Temperature Material Processes

Volumn 7, Issue 2, 2003, Pages 253-260

  Benmansour, M ^a   Darwiche, S ^a   Francke, E ^a   Dresvin, S ^b   Morvan, D ^a   Amouroux, J ^a  

^a SORBONNE UNIVERSITÉ   (France)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

Diameter deacreasing; Evaporation rate; Material treatment; On line measurements; Residence time

Indexed keywords

EMISSION SPECTROSCOPY; EVAPORATION; HEAT TRANSFER; HIGH TEMPERATURE EFFECTS; LASER DOPPLER VELOCIMETERS; MATHEMATICAL MODELS; PARTICLE SIZE ANALYSIS; PLASMA ARC MELTING; PLASMA HEATING; POWDER METALS; PURIFICATION; SURFACE MEASUREMENT; SURFACE TREATMENT; THERMOOXIDATION; TRAJECTORIES;

DIAMETER MEASUREMENTS; RESIDENCE TIME; THERMAL PLASMA;

SILICA;

EID: 0346964116     PISSN: 10933611     EISSN: None     Source Type: Journal    
DOI: 10.1615/HighTempMatProc.v7.i2.160     Document Type: Article

References (7)

1. P. Fauchais, A. Vardelle, A. Grimaud. High Temperature Chemical Process, Vol: I, pp: 599-615, (1992)
2. M. Vardelle, A. Vardelle, P. Fauchais. Journ. Thermal Spray Technol. 2, (2), pp: 79-91, (1993)
3. J.R. Fink, W.D. Swank, C.L. Jeffrey. IEEE Trans. Plasma Sci. Vol: 18, pp: 948-957, (1990)
4. th Int. Symp. On Plasma Chemistry, Vol: 4, pp 1921-1926. (1999)
5. th Thermal Plasma Process, Vol 3, pp: 257-262. (2001)
6. M. Benmansour, E. Francke, D. Morvan, J. Amouroux, D. Ballutaud. Thin Solid films 403-404, pp 112-115. (2002)
7. th Int. Symp. On plasma Chemistry, Vol III, pp 1063-1070. (2001)