Highly confined two-dimensional electron gas in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped structure with a strained InAs quantum well

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 745-748

  Akazaki, Tatsushi ^a   Nitta, Junsaku ^a   Takayanagi, Hideaki ^a   Enoki, Takatomo ^b   Arai, Kunihiro ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories

^b NTT CORPORATION   (Japan)

Author keywords

Effective mass; Electron confinement; InAs inserted channel; Shubnikov de Haas measurement; Strain

Indexed keywords

EID: 0004486866     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666534     Document Type: Article

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