Structural characterization of InGaAs/InAlAs quantum wells grown on (111)-InP substrates

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 999-1003

  Vila A ^a   Cornet, A ^a   Morante, J R ^a   Georgakilas, A ^b   Halkias, G ^c   Becourt N ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b UNIVERSITY OF CRETE   (Greece)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346845639     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00140-1     Document Type: Article

References (8)

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8. Georgakilas, A., Halkias, G., Christou, A., Kornilios, N., Papavassiliou, C., Zekentes, K., Konstantinidis, G., Peiró, F., Cornet, A., Ababou, S., Tabata, A. and Guillot, G., J. Electrochem. Soc., 140 (1993) 1503.