Role of electronic versus atomic relaxations in stokes shifts at defects in solids

Physical Review Letters

Volumn 91, Issue 22, 2003, Pages

  Bakos, T ^a   Rashkeev, S N ^a   Pantelides, S T ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; LIGHT ABSORPTION; MOLECULES; OXYGEN; PHOTOLUMINESCENCE; PHOTONS; SILICA; SOLIDS;

AMORPHOUS SILICA; ATOMIC RELAXATION; ELECTRONIC RELAXATION; STOKES SHIFTS;

RELAXATION PROCESSES;

EID: 0346688984     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.226402     Document Type: Article

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