A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 391-394

  Emtsev, V V ^a   Emtsev Jr , V V ^a   Poloskin, D S ^a   Shek, E I ^a   Sobolev, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Electrical measurement; Ion implantation; Rare earth impurity; Silicon

Indexed keywords

EID: 0346617084     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00135-5     Document Type: Article

References (10)

1. V.F. Masterov, Fiz. Tekh. Poluprovodn. 27 (1993) 1435. (Semiconductors (AIP) 27 (1993) 791).
2. V.F. Masterov, Fiz. Tekh. Poluprovodn. 27 (1993) 1435. (Semiconductors (AIP) 27 (1993) 791).
3. J.L. Benton, J. Michel, L.C. Kimerling, D.C. Jacobson, Y.H. Xie, D.J. Eaglesham, E.A. Fitzgerald, J.M. Poate, J. Appl. Phys. 70 (1991) 2667.
4. J. Michel, J.L. Benton, R.F. Ferrante, D.C. Jacobson, D.J. Eaglesham, E.A. Fitzgerald, Y.-H. Xie, J.M. Poate, L.C. Kimerling, J. Appl. Phys. 70 (1991) 2672.
5. S. Libertino, S. Coffa, G. Franzó, F. Priolo, J. Appl. Phys. 78 (1995) 3867.
6. H. Przybylinska, W. Jantsch, Yu. Suprun-Belevitch, M. Stepikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R.J. Wilson, B.J. Sealy, Phys. Rev. B 54 (1996) 2532.
7. F. Priolo, G. Franzó, S. Coffa, A. Camera, Phys. Rev. B 57 (1998) 4443.
8. V.V. Emtsev, G.A. Oganesyan, K. Schmalz, in: H. Richter, M. Kittler, C. Claeys (Eds.), Solid State Phenomena, vols. 47-48, Scitec Publications Ltd., Switzerland, 1996, pp. 259-266.
9. V.V. Emtsev, D.S. Poloskin, N.A. Sobolev, E.I. Shek, Fiz. Tekh. Poluprovodn. 28 (1994) 1084 (Semiconductors (AIP) 28 (1994) 624).
10. V.V. Emtsev, D.S. Poloskin, N.A. Sobolev, E.I. Shek, Fiz. Tekh. Poluprovodn. 28 (1994) 1084 (Semiconductors (AIP) 28 (1994) 624).