DLTS and CV analysis of doped and N-implanted GaN

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 531-537

  Haase, D ^a   Schmid, M ^a   Doernen, A ^a   Haerle, V ^a   Bolay, H ^a   Scholz, F ^a   Burkard, M ^a   Schweizer, H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CARRIER COMMUNICATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SULFUR; VOLTAGE MEASUREMENT;

GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030386549     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-531     Document Type: Conference Paper

References (15)