H2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions

Journal of the Electrochemical Society

Volumn 150, Issue 12, 2003, Pages

  Yu, Cheng Ming ^a   Lin, Horng Chih ^b   Huang, Tiao Yuan ^a,b   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); HYDROGEN; LEAKAGE CURRENTS; PASSIVATION; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

DRAIN; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; PLASMA PASSIVATION; SOURCE;

THIN FILM TRANSISTORS;

EID: 0346390626     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1627355     Document Type: Article

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