Thin-Film Multilayer Magnetic Sensors Based on the Anisotropic Magnetoresistive Effect

Russian Microelectronics

Volumn 29, Issue 2, 2000, Pages 137-146

  Kasatkin, S I ^a   Murav'ev, A M ^a   Vasil'eva, N P ^a   Lopatin, V V ^a   Popadinets, F F ^a   Svatkov, A V ^a  

^a TRAPEZNIKOV INSTITUTE OF CONTROL SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346387320     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02773248     Document Type: Article

References (8)

1. Pohm, A.V., Daughton, J.M., Brown, J., and Beech, R., The Architecture of a High Performance Mass Store with GMR Memory Cells, IEEE Trans. Magn., 1995, vol. 31, no. 6, pp. 3200-3202.
2. Vasil'eva, N.P. and Kasatkin, S.I., Logic Elements Based on Spin-Valve Magnetoresistive Structures, Mikroelektronika, 1997, vol. 26, no. 6, pp. 470-476.
3. Red'ko, V.G. and Zvezdin, K.A., A Magnetoresistive Neurochip: Architecture and Operation, Mikroelektronika, 1997, vol. 26, no. 6, pp. 420-425.
4. Vasil'eva, N.P., Kasatkin, S.I., and Murav'ev, A.M., Thin-Film Magnetoresistive Sensors, Zarubezh. Elektron. Tekh., 1994, nos. 4-6, pp. 56-76.
5. Tondra, M. et al., Picotesla field sensor design using spin dependent tunneling devices, Digest MMM'98, p. DA-04.
6. Kasatkin, S.I. and Murav'ev, A.M., RF Inventor's Certificate no. 1 807 534, 1993.
7. Averin, N.N., Vasil'eva, N.P., Kasatkin, S.I., Murav'ev, A.M., and Noskov, A.N., Thin-Film Two-Layer Magnetoresistive Sensors, Prib. Sist. Upravl., 1995, no. 2, pp. 24-26.
8. Averin, N.N., Dobrynin, S.L., Kasatkin, S.I., Murav'ev, A.M., and Noskov, A.N., RF Patent 2066504, 1996.