Logic elements based on spin-valve magnetoresistive structures

Russian Microelectronics

Volumn 26, Issue 6, 1997, Pages 406-411

  Vasil'eva, N P ^a   Kasatkin, S I ^a  

^a TRAPEZNIKOV INSTITUTE OF CONTROL SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000656396     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Vasil'eva, N.P., Granovskii, A.B., Kasatkin, S.I., and Murav'ev, A.M., Memory Elements Based on Magnetoresistive Thin-Film Multilayer Structures, Zarubezh. Electron. Tekh., 1995, no. 1, pp. 32-60.
2. Daughton, J.M. and Chen, Y.J., GMR Materials for Low Field Applications, IEEE Trans. Magn., 1993, vol. 29, no. 6, pp. 2705-2710.
3. Vasil'eva, N.P., Kasatkin, S.I., and Murav'ev, A.M., Promising Spin-Valve Magnetoresistive Memory Elements, Avtom.Telemekh., 1995, no. 10, pp. 147-158.
4. Daughton, J.M., Magnetoresistive Memory Technology, Thin Solid Films, 1992, vol. 216, p. 162.
5. Pohm, A.V., Chen, E.Y., Beech, R.S., et al., Experimental and Analytical of 0.2 Micron Wide, Multi-Layer, GMR Memory Elements, Digest INTERMAG-96, CE-05.
6. Tang, D.D., Wang, P.K., Speriosu, V.S., and Kung, K.K., Spin-Valve RAM Cell, IEEE Trans. Magn., 1995, vol. 31, no. 6, pp. 3206-3208.
7. Dieny, B., Giant Magnetoresistance in Spin-Valve Multilayers, J. Magn. Magn. Mater., 1994, vol. 136, pp. 335-359.
8. Broun, J.L. and Pohm, A.V, 1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells, IEEE Trans. Compon. Pack. Manuf. Technol., 1994, part A, vol. 17, no. 3, pp. 373-379.
9. Vasil'eva, N.P. and Petrukhin, B.P., Proektirovanie logicheskikh elementov avtomatiki (Design of Logic Elements for Automated Devices), Moscow: Energiya, 1970.