Relationship between crystal structure and electrical properties of nonuniform Al-doped ZnO thin films prepared by RF magnetron sputtering

Journal of the Ceramic Society of Japan

Volumn 111, Issue 1299, 2003, Pages 831-836

  Sugawara, Tomoaki ^a   Shimono, Isao ^a   Tsujino, Jiro ^b   Homma, Norio ^b   Fukuda, Hisashi ^c  

^a HOKKAIDO INDUSTRIAL TECHNOLOGY CENTER   (Japan)

^b Hokkaido Electric Power Co Inc   (Japan)

^c MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Carrier concentration; Hall mobility; Heavy doping; RF magnetron sputtering; Zinc oxide

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; ZINC OXIDE;

BROOKS THEORY; CARRIER SCATTERING; DINGLE THEORY; HALL MOBILITY; HEAVY DOPING;

THIN FILMS;

EID: 0346361719     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.111.831     Document Type: Article

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