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Volumn 2000, Issue 1-2, 2000, Pages 93-112

Intersubband Relaxation of 2D Electrons in AlGaAs(Si)/GaAs Heavily Doped Heterojunction

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[No Author keywords available]

Indexed keywords


EID: 0346355662     PISSN: 02043467     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (9)

References (26)
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    • V.I. Kadushkin, Sov. Phys. Semicond., 15 (1981) 230; 24 (1990) 2029.
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    • V.I. Kadushkin, Sov. Phys. Semicond., 25 (1991) 459; 26 (1992) 1323.
    • (1992) Sov. Phys. Semicond. , vol.26 , pp. 1323
  • 9
    • 0001211980 scopus 로고
    • L.R. Leadley, R.J. Nicholas, J.J. Harris, C.T. Foxon. Semicond. Sci. Tecnoi., 4 (1989) 885; 5 (1990) 1081.
    • (1990) Semicond. Sci. Tecnoi. , vol.5 , pp. 1081
  • 11
    • 25944443707 scopus 로고
    • R.T. Coleridge, Semicond. Sci. Tecnol., 5 (1990) 961; Phys. Rev., B44 (1991) 3793.
    • (1991) Phys. Rev. , vol.B44 , pp. 3793
  • 19
    • 0346062741 scopus 로고
    • V. Karpus, Sov. Phys. Semicond., 20 (1986) 10; 22 (1988) 43.
    • (1988) Sov. Phys. Semicond. , vol.22 , pp. 43


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.