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Physical Review B

Volumn 38, Issue 11, 1988, Pages 7866-7869

Evidence of a mobility edge in the second subband of an Al0.33Ga0.67As-GaAs heterojunction

(5) Fletcher, R a Zaremba, E a D'Iorio, M b Foxon, C T c Harris, J J c

a QUEEN S UNIVERSITY (Canada)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005216647 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.38.7866 Document Type: Article

Times cited : (42)

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