GaN/W/W-oxide metal base transistor with very large current gain and power gain

Applied Physics Letters

Volumn 77, Issue 5, 2000, Pages 753-755

  Mochizuki, K ^a,b   Uesugi, K ^a,c   Asbeck, P M ^a   Gotoh, J ^b   Mishima, T ^b   Hirata, K ^b   Oda, H ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HITACHI LTD   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346355193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127108     Document Type: Article

References (7)

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