Roughening behavior in Si/SiGe heterostructures under O2 + bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 1-2, 2004, Pages 76-82

  Lau, G S ^a   Tok, E S ^a   Liu, R ^a   Wee, A T S ^a   Zhang, J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); EROSION; GERMANIUM; ION BOMBARDMENT; MIXING; MORPHOLOGY; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INCIDENCE ANGLE; MOLAR FRACTIONS;

HETEROJUNCTIONS;

EID: 0346339675     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01711-7     Document Type: Article

References (20)

1. R.G. Wilson, F.A. Stevie, C.W. Magee, Secondary Ion mass Spectrometry: A Practical, Handbook for Depth Profiling and Bulk Impurity Analysis, Wiley-Interscience, p. 1.5.
2. Jiang Z.X., Alkemade P.F.A. J. Vac. Sci. Technol. B. 16:1998;1971.
3. Stevie F.A., Mohara P.M., Simons D.S., Chi P. J. Vac. Technol. A. 6:1988;76.
4. Honig R.E. Thin Solid Films. 31:1976;89.
5. Hofmann S. Appl. Phys. 9:1976;59.
6. ASTM E-42, Standard Terminology Relating to Surface Analysis E 673-91c, ASTM, Philadelphia, 1992.
7. Hofmann S. Surf. Interface Anal. 21:1994;673.
8. Hofmann S. Rep. Prog. Phys. 19:1998;827.
9. Allen P.N., Dowsett M.G. Surf. Interface Anal. 21:1994;206.
10. King B.V., Tsong I.S.T. J. Vac. Sci. Technol. A. 2:1984;1443.
11. Hofmann S. J. Vac. Sci. Technol. 10:1992;316.
12. Liau Z.L., Tsaur B.Y., Mayer J.W. J. Vac. Sci. Technol. 16:1979;121.
13. Hofmann S. Surf. Interface Anal. 27:1999;825.
14. Rar A., Kojima I., Moon D.W., Hofmann S. Thin Solid Films. 355:1999;390.
15. Biersack J.P. Nucl. Instr. and Meth. B. 27:1987;21.
16. Rar A., Hofmann S., Yoshihara K., Kajiwara K. J. Surf. Anal. 5:1999;44.
17. Rar A., Hofmann S., Yoshihara K., Kajiwara K. Appl. Surf. Sci. 144:1999;310.
18. S. Hofmann, J.M. Sanz, in: F. Abeles, M. Croset (Eds.), Proceedings of the 8th International Vacuum Congress Cannes 1980, Vol. I: Thin Films, Societe Francaise du Vide, Paris, 1980, p. 90.
19. Ng C.M., Wee A.T.S., Huan C.H.A., See A. Nucl. Instr. and Meth. B. 179:2001;557.
20. Zhang J., Marinopoulou A., Hartung J., Lightowelers E.C., Anwar N., Parry G., Xie M.H., Mokler S.M., Wu X.D., Joyce B.A. J. Vac. Sci. Technol. A. 12:1994;1139.