Defect-Deformation Mechanism of the Formation of a Pore Ensemble in Semiconductor and Metal Etching: Theory and Experiment

Laser Physics

Volumn 13, Issue 11, 2003, Pages 1442-1452

  Emel'yanov, V I ^a   Eremin, K I ^a   Starkov, V V ^b   Gavrilin, E Yu ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALS; DEFORMATION; DOPING (ADDITIVES); ELASTICITY; ELECTROCHEMISTRY; ETCHING; FOURIER TRANSFORMS; LUMINESCENCE; PHOTONS; POINT DEFECTS; SILICON; STRESSES; SURFACE TENSION;

DIFFUSION FLOW; SURFACE DENSITY; SURFACE IMAGES;

SEMICONDUCTOR MATERIALS;

EID: 0346306230     PISSN: 1054660X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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