Void-like defects in annealed Czochralski silicon

Applied Physics Letters

Volumn 73, Issue 16, 1998, Pages 2311-2312

  Gao, M ^a   Duan, X F ^a   Peng, L M ^a   Li, J ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346284081     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121807     Document Type: Article

References (11)

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