Stability of W and Re contacts to GaN

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 128-133

  Gaser, S M ^a   Nicolet, M A ^a   Kolawa, E ^b   Ruiz, R ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

BACKSCATTERING SPECTROMETRY; METAL CONTACTS; TIME TEMPERATURE; VACUUM HEAT TREATMENT; VACUUM THERMAL ANNEALING;

GALLIUM NITRIDE;

EID: 0346254563     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676773     Document Type: Conference Paper

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