Growth morphology and structure of bismuth thin films on GaSb(110)

Surface Science

Volumn 414, Issue 1-2, 1998, Pages 254-260

  Van Gemmeren, T ^a   Lottermoser, L ^a   Falkenberg, G ^a   Bunk, O ^a   Johnson, R L ^a   Feidenhans'l, R ^b   Neilsen, M ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Bismuth; Gallium antimonide; Low index single crystal surfaces; Metal semiconductor interfaces; Scanning tunneling microscopy; Soft X ray photoelectron spectroscopy; Surface structure, morphology, roughness and topography

Indexed keywords

BISMUTH; CHEMICAL BONDS; CRYSTAL ORIENTATION; FILM GROWTH; MATHEMATICAL MODELS; MONOLAYERS; MORPHOLOGY; PHASE COMPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SURFACE ROUGHNESS; THIN FILMS;

GALLIUM ANTIMONIDE; LOW INDEX SINGLE CRYSTALS;

METALLIC FILMS;

EID: 0346222412     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00516-0     Document Type: Article

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