Transport properties of μc-Si:H analyzed by means of numerical simulation

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 109-112

  Fantoni, Alessandro ^a   Vieira, Manuela ^b   Martins, Rodrigo ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

Author keywords

Numerical simulation; Transport properties; c Si:H

Indexed keywords

EID: 0346206471     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01193-6     Document Type: Article

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