Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers

Volumn , Issue , 2003, Pages 487-490

  Raychowdhury, Arijit ^a   Mukhopadhyay, Saibal ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; FERMI LEVEL; LOGIC DESIGN; POLYNOMIALS; PROBABILITY; SIMULATORS;

DEVICE SIMULATORS; GATE POTENTIAL; SURFACE POTENTIAL;

FIELD EFFECT TRANSISTORS;

EID: 0346148455     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iccad.2003.159728     Document Type: Conference Paper

References (3)

1. J. Guo et. al., IEDM 02, Digest, pp.711-715.
2. S. Wind, et. al., Appl. Phys. Lett, Vol. 80, 2002, pp 3817-3819
3. P.L. McEuen, et. al., IEEE Trans. Nanotechnology, Vol. 1, March 2002, pp. 78-85