Highly reliable chemical vapor deposited stacked oxynitride gate dielectrics fabricated by in situ rapid thermal multiprocessing

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2666-2668

  Yan, J ^a   Han, L K ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345931913     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116275     Document Type: Article

References (12)

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