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Volumn 32, Issue 10, 1998, Pages 1077-1079

Photoelectric properties of GaN/GaP heterostructures

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[No Author keywords available]

Indexed keywords


EID: 0345828269     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187571     Document Type: Article
Times cited : (6)

References (24)
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  • 8
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    • V. Yu. Rud', M. Serginov, and S. Tilevov, Pis'ma Zh. Tekh. Fiz. 18, 50 (1992) [Sov. Tech. Phys. Lett. 18, 44 (1992)].
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    • S. G. Konnikov, D. Malebaev, V. Yu. Rud', and L. M. Fedorov, Pis'ma Zh. Tekh. Fiz. 18, 11 (1992) [Sov. Tech. Phys. Lett. 18, 8 (1992)].
    • (1992) Sov. Tech. Phys. Lett. , vol.18 , pp. 8
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    • Yu. V. Zhilyaev, N. Nazarov, V. Yu. Rud', Yu. V. Rud', and L. M. Fedorov, Fiz. Tekh. Poluprovodn. 27, 1611 (1993) [Semiconductors 27, 1540 (1993)].
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    • (1997) Semiconductors , vol.31 , pp. 681
  • 23
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    • V. M. Botnaryuk, A. V. Koval', A. V. Simashkevich, D. A. Shcherban, V. Yu. Rud', and Yu. V. Rud', Fiz. Tekh. Poluprovodn. 31, 800 (1997) [Semiconductors 31, 677 (1997)].
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.