Shallow ohmic contacts to p-type InAs

Electronics Letters

Volumn 39, Issue 25, 2003, Pages 1866-1868

  Lysczek, E M ^a   Mohney, S E ^a   Wittberg, T N ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BERYLLIUM; ELECTRIC RESISTANCE; GOLD; METALLIZING; MOLECULAR BEAM EPITAXY; PALLADIUM; PLATINUM; SEMICONDUCTING INDIUM COMPOUNDS;

METAL DEPOSITION METHOD; SHALLOW OHMIC CONTACTS;

OHMIC CONTACTS;

EID: 0345761627     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031154     Document Type: Article

References (6)

1. Pekarik, J.J., Kroemer, H., and English, J.H.: 'An AlSb-InAs-AlSb double-heterojunction p-n-p bipolar transistors', J. Vac. Sci. Technol. B, 1992, 10, pp. 1032-1034
2. Maimon, S., et al.: 'InAs-based heterojunction bipolar transistors', Electron. Lett., 2002, 38, pp. 344-346
3. Thomas, S., et al.: 'Fabrication and performance of InAs-based heterojunction bipolar transistors'. Proc. Indium Phosphide Related Materials Conf., Santa Barbara, USA, 2003, p. 26
4. Katz, A., et al.: 'Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing', J. Appl. Phys., 1990, 68, pp. 4141-4150
5. +-InAs ohmic contacts', J. Vac. Sci. Technol. B, 1990, 8, pp. 1125-1127
6. Marlow, G.S., and Das, M.B.: 'The effects of contact size and non-zero metal resistance on the determination of specific contact resistance', Solid-State Electron., 1982, 25, p. 91