K-band GaN power HFET's with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 199-200

  Micovic, M ^a   Moon, J S ^a   Kurdoghlian, A ^a   Hashimoto, P ^a   Wong, D ^a   McCray, L ^a   Hussain, T ^a   Janke, P ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; GALLIUM NITRIDE; HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SUBSTRATES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0034874076     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
2. High Content AlGaN/GaN HEMT's on SiC substrates with very-high power performance