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Volumn 68, Issue 5, 1996, Pages 652-654

Thermal stability of the silicon doping of GaAs grown on (111)A oriented substrates

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[No Author keywords available]

Indexed keywords


EID: 4243168200     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116498     Document Type: Article
Times cited : (4)

References (12)
  • 2
    • 0026980557 scopus 로고    scopus 로고
    • F. Piazza, L. Pavesi, M. Henini, and D. Johnston, Semicond. Sci. Technol. 7, 1504 (1992); L. Pavesi, M. Henini, and D. Johnston, Appl. Phys. Lett. 66, 2846 (1995).
    • F. Piazza, L. Pavesi, M. Henini, and D. Johnston, Semicond. Sci. Technol. 7, 1504 (1992); L. Pavesi, M. Henini, and D. Johnston, Appl. Phys. Lett. 66, 2846 (1995).
  • 6
    • 21544437490 scopus 로고    scopus 로고
    • P. Bhattacharya, in Growth, Characterization and Exploitation of III-V Semiconductors on Novel Index Surfaces, edited by M. Henini, G. Guillot, and L. Pavesi [Microelectronics J. 26 (1995)]
    • P. Bhattacharya, in Growth, Characterization and Exploitation of III-V Semiconductors on Novel Index Surfaces, edited by M. Henini, G. Guillot, and L. Pavesi [Microelectronics J. 26 (1995)].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.