Influence of hydrogen desorption on the generation of defects in LEPECVD

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 76-80

  Rosenblad, C ^a   Deller, H R ^a   Von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DESORPTION; EPITAXIAL GROWTH; HYDROGEN; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

LOW ENERGY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (LEPECVD);

SILICON WAFERS;

EID: 0345504130     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00283-9     Document Type: Article

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