Examination of band bending at C60/metal interfaces by the Kelvin probe method

Synthetic Metals

Volumn 137, Issue 1-3, 2003, Pages 1377-1378

  Hayashi, N ^a   Ishii, H ^b   Ouchi, Y ^a   Seki, K ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Band bending; C60; Energy level alignment; Kelvin probe method; Vacuum level shift; Work function

Indexed keywords

DEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); SPECTROSCOPIC ANALYSIS; ULTRAHIGH VACUUM;

BAND BENDING;

FULLERENES;

EID: 0345382785     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)01149-9     Document Type: Conference Paper

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