Energy level alignment and band bending at TPD/metal interfaces studied by Kelvin probe method

Synthetic Metals

Volumn 121, Issue 1-3, 2001, Pages 1717-1718

  Hayashi, N ^a   Ito, E ^a   Ishii, H ^a   Ouchi, Y ^a   Seki, K ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Band bending; Energy level alignment; Kelvin probe method; Mott Schottky model; Vacuum level shift

Indexed keywords

ENERGY LEVEL ALIGNMENT; KELVIN PROBE METHOD; MOTT-SCHOTTKY MODEL; TRIPHENYLDIAMINE; VACUUM LEVEL SHIFT;

AMINES; DEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); TEMPERATURE PROGRAMMED DESORPTION; ULTRAHIGH VACUUM;

SEMICONDUCTING FILMS;

EID: 0035867489     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(00)01255-8     Document Type: Article

References (1)

1. H. Ishii, K. Sugiyama, E. Ito, K. Seid, Adv. Mater. 11 (1999) 605.