Current increase in thin gate-oxide (3.5-7.0 nm) metal-oxide-silicon structures with the boron-doped polycrystalline-silicon gates biased negatively

Journal of Applied Physics

Volumn 82, Issue 9, 1997, Pages 4629-4636

  Itsumi, Manabu ^a   Sato, Yoshiyuki ^a   Nakayama, Satoshi ^a   Muramoto, Susumu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345301643     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366201     Document Type: Article

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