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Volumn , Issue , 1996, Pages 228-229
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Effect of nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BORON;
DIFFUSION;
INTERFACES (MATERIALS);
ION IMPLANTATION;
NITROGEN;
OXIDES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
SUBSTRATES;
BORON PENETRATION;
POLYSILICON GATES;
SUPPRESSION;
GATES (TRANSISTOR);
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EID: 0029703781
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (6)
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References (4)
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