Pyroelectricity in Highly Stressed Quasi-Amorphous Thin Films

Advanced Materials

Volumn 15, Issue 21, 2003, Pages 1826-1828

  Lyahovitskaya, Vera ^a   Zon, Ilya ^a   Feldman, Yishay ^a   Cohen, Sidney R ^a   Tagantsev, Alexander K ^b   Lubomirsky, Igor ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; BARIUM COMPOUNDS; COMPRESSIVE STRESS; MAGNETRON SPUTTERING; PERMITTIVITY; PIEZOELECTRICITY; POLARIZATION; PYROELECTRICITY; REFRACTIVE INDEX; SIGNAL TO NOISE RATIO; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NANOMETER-SCALE DEVICES; PYROELECTRIC CURRENTS; TEMPERATURE GRADIENT;

THIN FILMS;

EID: 0345293117     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200305346     Document Type: Article

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29. The measurement was performed using the signal access module, to which a sinusoidal voltage was applied to the tip at 5-15 kHz, and the resultant tip response was monitored with a lock in amplifier.