Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 441-444

  Han, L J ^a   Ong, T Y ^a   Prakash, S ^a   Chua, L G ^a   Choi, W K ^a   Tan, L S ^a   Loh, F C ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Amorphous silicon carbide; Annealing; FTIR; Sputtering; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SILICON CARBIDE; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON CARBIDE FILMS; INTERFACE TRAPPED CHARGE DENSITY;

THIN FILMS;

EID: 0345148860     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01660-5     Document Type: Article

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