Effects of hydrogen and rf power on the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide films

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1611-1616

  Choi, W K ^a   Loo, F L ^a   Loh, F C ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037801578     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362959     Document Type: Article

References (15)

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