Singlemode 1.55 μm VCSELs with low threshold and high output power

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1731-1732

  Ortsiefer, M ^a   Furfanger M ^a   Rosskopf, J ^a   Bohm G ^b   Kohler F ^b   Lauer, C ^b   Maute, M ^b   Hofmann, W ^b   Amann, M C ^b  

^a VERTILAS GMBH   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; PUMPING (LASER); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; TUNNEL JUNCTIONS;

BURIED TUNNEL JUNCTION; VERTICAL CAVITY SURFACE EMITTING LASER;

QUANTUM WELL LASERS;

EID: 0345134642     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031128     Document Type: Article

References (6)

1. Shau, R., Ortsiefer, M., Rosskopf, J., Böhm, G., Köhler, F., and Amann, M.-C.: 'Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature', Electron. Lett., 2001, 37, pp. 1295-1296
2. Ortsiefer, M., Shau, R., Mederer, F., Michalzik, R., Rosskopf, J., Böhm, G., Köhler, F., Lauer, C., Maute, M., and Amann, M.-C.: 'Highspeed data transmission with 1.55 μm vertical-cavity surface-emitting lasers'. 28th European Conf. on Optical Communication, Copenhagen, Denmark, 2002 (Post-deadline session PD4.9)
3. Lauer, C., Ortsiefer, M., Shau, R., Rosskopf, J., Böhm, G., Maute, M., Köhler, F., and Amann, M.-C.: 'Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 μm', Electron. Lett., 2003, 39, pp. 57-58
4. Whiteaway, J.E.A., Thompson, G.H.B., Greene, P.D., and Glew, R.W.: 'Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasers', Electron. Lett., 1991, 27, pp. 340-342
5. Soref, R.A., and Lorenzo, J.P.: 'All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 μm', IEEE J. Quantum Electron., 1986, 22, pp. 873-879
6. Piprek, J., Akulova, Y.A., Babic, D.I., Coldren, L.A., and Bowers, J.E.: 'Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at -30 nm gain offset', Appl. Phys. Lett., 1998, 72, pp. 1814-1816