Hydrogen-rhodium complexes in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 141-145

  Knack, S ^a   Weber, J ^a   Lemke, H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; HYDROGEN; HYDROGENATION; RHODIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

WET ETCHING;

SEMICONDUCTING SILICON;

EID: 0345072501     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00284-0     Document Type: Article

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