Observation of persistent photoconductivity in n-doped p-type ZnSe/GaAs heterojunctions

Journal of Physics D: Applied Physics

Volumn 32, Issue 4, 1999, Pages 369-373

  Seghier, D ^a   Gislason, H P ^a  

^a UNIVERSITY OF ICELAND   (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; HOLE TRAPS; INTERFACES (MATERIALS); LIGHTING; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ELECTRIC CURRENT MEASUREMENT; TEMPERATURE MEASUREMENT;

PERSISTENT PHOTOCURRENT; THERMAL ACTIVATION ENERGY; PERSISTENT PHOTOCURRENT (PPC);

HETEROJUNCTIONS;

EID: 0345045410     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/4/003     Document Type: Article

References (15)

1. Nakayama N, Itoh S, Nakano K, Okuyama H, Ozawa M, Ishibashi A, Ikeda M and Mori Y 1993 Electron. Lett. 29 1488
2. Salokatve A et al 1993 Electron. Lett. 29 2192
3. Bube R H 1967 Semiconductors and Semimetals vol 3, ed R K Williardson and A C Beer (New York: Academic)
4. Olego D J 1988 J. Vac. Sci. Technol. B 6 1193
5. Ayyar S G et al 1990 J. Appl. Phys. 68 5226
6. Suemune I 1990 Appl. Phys. Lett. 63 2612
7. Lang D V and Logan R A 1977 Phys. Rev. Lett. 39 635
8. Mooney P M 1990 J. Appl. Phys. 67 R1
9. Jiang H X and Lin J Y 1989 Phys. Rev. B 40 10 025
10. Chen H M, Chen Y F, Lee M C and Feng M S 1997 J. Appl. Phys. 82 899
11. Chadi D J and Chang K J 1988 Phys. Rev. Lett. 57 873
12. Seghier D and Gislason H P 1997 Appl. Phys. Lett. 71 2295
13. Semaltianos N G, Karczewski G, Wojtwicz T and Furdyna J K 1993 Phys. Rev. B 47 12 540
14. He L X, Martin K P and Higgins R J 1989 Phys. Rev. B 39 13 276
15. Nicollini R et al 1994 Phys. Rev. Lett. 72 294