Effect of the interface on the electrical properties of ZnSe/GaAs heterojunctions grown by molecular beam epitaxy

Applied Physics Letters

Volumn 71, Issue 16, 1997, Pages 2295-2297

  Seghier, D ^a   Gislason, H P ^a  

^a UNIVERSITY OF ICELAND   (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005517477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120054     Document Type: Article

References (9)

1. W. Stutius and F. A. Ponce, J. Appl. Phys. 58, 1548 (1985).
2. K. Morimoto, J. Appl. Phys. 64, 495 (1988).
3. D. J. Olego, J. Vac. Sci. Technol. B 6, 1193 (1988).
4. E. Ho, P. A. Fisher, J. L. House, G. S. Petrich, L. A. Kolodziejski, J. Walker, and N. M. Johnson, Appl. Phys. Lett. 66, 1062 (1995).
5. A. G. Milnes and D. L. Feucht, in Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972), p. 98.
6. S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. 49, 85 (1986).
7. E. H. Rhoderic and R. H. Williams, in Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), p. 17.
8. T. Marshall, S. Colak, and D. Cammack, J. Appl. Phys. 66, 1753 (1989).
9. A. Singh, Solid-State Electron. 28, 223 (1985).