High-Efficiency InP-based DHBT Active Frequency Multipliers for Wireless Communications

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 7 PART 1, 1996, Pages 1165-1167

  De Los Santos, Hector J ^a   Nardi, Daniel D ^a   Hargrove, Kevin L ^a   Hafizi, Madjid ^b   Stanchina, William E ^b  

^a BOEING COMPANY   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK TOPOLOGY; ELECTRONIC PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; PERFORMANCE; RADIO COMMUNICATION; SCHEMATIC DIAGRAMS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS;

FREQUENCY MULTIPLYING CIRCUITS;

EID: 0030196360     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.508655     Document Type: Article

References (12)

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