Suppression of impurity interdiffusion in heteroepitaxy by inserting a low-temperature buffer layer in between the epilayer and the substrate

Journal of Crystal Growth

Volumn 261, Issue 1, 2004, Pages 159-163

  Song, J S ^a   Seo, S H ^a   Oh, M H ^a   Chang, J H ^b   Cho, M W ^c   Yao, T ^c  

^a NeosemiTech Corporation   (South Korea)

^b Korea Maritime University   (South Korea)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Diffusion; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; DEFECTS; EPITAXIAL GROWTH; EXCITONS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

BUFFER LAYERS; DONOR ACCEPTOR PAIRS (DAP); HETEROVALENCY;

INTERDIFFUSION (SOLIDS);

EID: 0344740579     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.018     Document Type: Article

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