메뉴 건너뛰기




Volumn 56, Issue 20, 1997, Pages 13335-13345

Formation of the Zn/CdTe(100) interface: Interdiffusion, segregation, and Cd-Zn exchange studied by photoemission

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0344718181     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.13335     Document Type: Article
Times cited : (6)

References (42)
  • 3
    • 18844416542 scopus 로고
    • According to the INSPEC data base (Institution of Electrical Engineers, last update 25 Aug. 1996), only one photoemission study of Zn adsorption on semiconductors has been performed by Raju et al. for (Formula presented), where the formation of an intermediate compound between Zn and As is proposed: D. V. R. Raju, V. J. Rao, S. Badrinarayanan, A. B. Mandale, and S. K. Kulkarni, Appl. Phys. A: Solids Surf. 50, 339 (1990).
    • (1990) Appl. Phys. A: Solids Surf. , vol.50 , pp. 339
    • Raju, D.1    Rao, V.2    Badrinarayanan, S.3    Mandale, A.4    Kulkarni, S.5
  • 24
    • 33746363964 scopus 로고
    • S.-H. Wei and Alex Zunger, Phys. Rev. B 37, 8958 (1988).
    • (1988) Phys. Rev. B , vol.37 , pp. 8958
  • 26
    • 0028259856 scopus 로고
    • C. J. Powell, Surf. Sci. 299/300, 34 (1994), and references therein.
    • (1994) Surf. Sci. , vol.299-300 , pp. 34
    • Powell, C.1
  • 37
    • 34250498700 scopus 로고
    • W. Lotz, Z. Phys. 232, 101 (1970).
    • (1970) Z. Phys. , vol.232 , pp. 101
    • Lotz, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.