Doping and compensation phenomena of Ag in CdTe

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 384-387

  Bollmann, J ^a   Wienecke, M ^a   Rohrich J ^a   Kerkow, H ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANNEALING; CHARACTERIZATION; CHEMICAL VARIABLES CONTROL; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; IMPURITIES; ION IMPLANTATION; RADIOISOTOPES; SEMICONDUCTOR DOPING; SILVER;

COMPENSATION PHENOMENA; DOPING EFFICIENCY; FREE HOLE DENSITY; NUCLEAR DECAY SERIES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030562220     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00769-5     Document Type: Article

References (5)

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3. M. Rüb, N. Achtziger, J. Meier, U. Reislöhner, P. Rudolph, M. Wienecke and W. Witthuhn, J. Crystal Growth 138 (1994) 285.
4. M. Wienecke, H. Berger and M. Schenk, Mater. Sci. Eng. B 16 (1993) 219.
5. P. Emanuelsson, P. Omling, B.K. Meyer, M. Wienecke and M. Schenk, Phys. Rev. B 47 (1993) 15578.