SCOPUS 정보 검색 플랫폼

Volumn 119, Issue 19, 2003, Pages 10063-10068

An ab initio investigation on the vertical electron detachment energies of semiconductor-alkali binary anions EnA- (A = K, Na, Li; E = Ge, Si; n = 1-10)

(3) Li, Si Dian a Ren, Guang Ming a Jin, Zhi Hao b

a XINZHOU TEACHERS UNIVERSITY (China)

b XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRONIC STRUCTURE; ELECTRONS; GREEN'S FUNCTION; GROUND STATE; MOLECULAR VIBRATIONS; NEGATIVE IONS; OPTIMIZATION; PERTURBATION TECHNIQUES; SPECTROSCOPY;

DETACHMENT ENERGIES; IONIC BOND LENGTHS; SEMICONDUCTOR ALKALI BINARY ANIONS; TIME OF FLIGHT MASS SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 0344667480 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.1617972 Document Type: Article

Times cited : (14)

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