Ab initio configuration interaction calculations of the semiconductor ternary clusters GelSimCn(l+m+n≤6)

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 16, 2002, Pages 1652131-1652139

  Li, Si Dian ^a,b   Li, Sheng Yun ^c   Zhao, Ming Gen ^b   Wu, Hai Shun ^d   Jin, Zhi Hao ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b XINZHOU TEACHERS UNIVERSITY   (China)

^c Taiyuan Teachers College   (China)

^d SHANXI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON CARBIDE;

AB INITIO CALCULATION; ARTICLE; CALCULATION; ELECTRON; ENERGY; SEMICONDUCTOR; STRUCTURE ANALYSIS; VIBRATION;

EID: 0142077009     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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