Low-temperature boron gettering for improving the carrier lifetime in Fe-contaminated bifacial silicon solar cells with n+pp+ back-surface-field structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5397-5404

  Joge, Toshio ^a   Araki, Ichiro ^a   Uematsu, Tsuyoshi ^a   Warabisako, Terunori ^a   Nakashima, Hiroshi ^b   Matsukuma, Kunihiro ^c  

^a HITACHI LTD   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c SOJO UNIVERSITY   (Japan)

Author keywords

Bifacial; Boron; Contamination; Fe; Fe behavior parameters; Gettering; Silicon; Solar cell

Indexed keywords

ANNEALING; BORON; BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTER SIMULATION; CONTAMINATION; DIFFUSION; GETTERS; IRON; LOW TEMPERATURE EFFECTS; REACTION KINETICS; SURFACE STRUCTURE;

BACK SURFACE FIELD STRUCTURE; BORON GETTERING; CARRIER LIFETIME;

SILICON SOLAR CELLS;

EID: 0344552944     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5397     Document Type: Article

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