Effect of oxygen plasma on activation of implanted silicon in gallium arsenide (II)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5450-5454

  Saito, Yoshihiro ^a   Nakajima, Shigeru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Activation efficiency; Ga out diffusion; GaAs MESFET; O2 plasma

Indexed keywords

DIFFUSION IN SOLIDS; FLUORESCENCE; INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; MESFET DEVICES; OXIDATION; OXYGEN; PHOTORESISTS; SILICON WAFERS;

FRONT END WAFER; OXYGEN PLASMA; TOTAL REFLECTION X RAY FLUORESCENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0344494577     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5450     Document Type: Article

References (3)

1. Y. Saito, S. Nakajima and N. Shiga: Jpn. J. Appl. Phys. 42 (2003) 2587.
2. M. Kuzuhara and H. Kohzu: Appl. Phys. Lett. 44 (1984) 527.
3. K. Taniguchi: Oyo Buturi 69 (2000) 427 [in Japanese].