The effect of oxygen plasma on activation efficiency of implanted silicon in gallium arsenide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2587-2591

  Saito, Yoshihiro ^a   Nakajima, Shigeru ^a   Shiga, Nobuo ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Activation efficiency; GaAs MESFET; O2 plasma; Threshold voltage

Indexed keywords

MESFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; THRESHOLD VOLTAGE;

ACTIVATION EFFICIENCY;

ION IMPLANTATION;

EID: 0037704808     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2587     Document Type: Article

References (4)

1. R. S. Christ: GaAs MANTECH, 1989, p. 44.
2. J. Cho, M. Pawlowicz and N. Saha: J. Appl. Phys. 72 (1992) 4172.
3. Y. Salto et al.: GaAs MANTECH, 1996. p. 191.
4. M. Ohmori: Cho-kosoku kagobutsu handotai debaisu (Ultra High Speed Compound Semiconductor Device) (Baihukan, Tokyo, 1986) p. 60 [in Japanese].