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Volumn 48, Issue 3, 2004, Pages 409-414

Low temperature saturation of p-n junction laser beam induced current signals

Author keywords

Laser beam induced current; LBIC; Non destructive characterisation; Photodiode; Temperature dependence

Indexed keywords

GAIN MEASUREMENT; LASER BEAMS; LOW TEMPERATURE OPERATIONS; NONDESTRUCTIVE EXAMINATION; PHOTODIODES;

EID: 0344466636     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.008     Document Type: Article
Times cited : (23)

References (8)
  • 1
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    • Spatial mapping of electrically active defects in HgCdTe using laser beam induced current by scanning laser microscopy
    • Bajaj J., Bubulac L.O., Newman P.R., Tennant W.E., Raccah P.M. Spatial mapping of electrically active defects in HgCdTe using laser beam induced current by scanning laser microscopy. J. Vac. Sci. Technol. A. 5(5):1987;3186-3189.
    • (1987) J. Vac. Sci. Technol. A , vol.5 , Issue.5 , pp. 3186-3189
    • Bajaj, J.1    Bubulac, L.O.2    Newman, P.R.3    Tennant, W.E.4    Raccah, P.M.5
  • 2
    • 0025440738 scopus 로고
    • Remote contact LBIC imaging of defects in semiconductors
    • Bajaj J., Tennant W.E. Remote contact LBIC imaging of defects in semiconductors. J. Cryst. Growth. 103:1990;170-178.
    • (1990) J. Cryst. Growth , vol.103 , pp. 170-178
    • Bajaj, J.1    Tennant, W.E.2
  • 5
    • 0345457951 scopus 로고    scopus 로고
    • Avant! Corp. and TMA Inc., Medici, Fremont, CA, USA, version 1998.4.1, 1998
    • Avant! Corp. and TMA Inc., Medici, Fremont, CA, USA, version 1998.4.1, 1998.
  • 6
    • 0036665087 scopus 로고    scopus 로고
    • Parameter identification for semiconductor diodes by LBIC imaging
    • Fang W., Ito K., Redfern D.A. Parameter identification for semiconductor diodes by LBIC imaging. SIAM J. Appl. Math. 62(6):2002;2149-2174.
    • (2002) SIAM J. Appl. Math. , vol.62 , Issue.6 , pp. 2149-2174
    • Fang, W.1    Ito, K.2    Redfern, D.A.3
  • 7
    • 0020183008 scopus 로고
    • Background and temperature dependent current-voltage characterisation of HgCdTe photodiodes
    • Rosbeck J.P., Starr R.E., Price S.L., Riley K.J. Background and temperature dependent current-voltage characterisation of HgCdTe photodiodes. J. Appl. Phys. 53(9):1982;6430-6440.
    • (1982) J. Appl. Phys. , vol.53 , Issue.9 , pp. 6430-6440
    • Rosbeck, J.P.1    Starr, R.E.2    Price, S.L.3    Riley, K.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.