Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

Journal of the Korean Physical Society

Volumn 43, Issue 5 II, 2003, Pages 887-891

  Shin, S H ^a   Lee, S H ^a   Kim, Y S ^a   Heo, J H ^a   Bae, D I ^a   Hong, S H ^a   Park, S H ^a   Lee, J W ^a   Lee, J G ^a   Oh, J H ^a   Kim, M S ^a   Cho, C H ^a   Chung, T Y ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Cell junction leakage; Data retention time; P SOG; STI material; STI void; Threshold voltage; Two HDP

Indexed keywords

EID: 0344120153     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.43.887     Document Type: Article

References (6)

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