IR birefringence in artificial crystal fabricated by anisotropie etching of silicon

Semiconductors

Volumn 37, Issue 4, 2003, Pages 399-403

  Astrova, E V ^a   Perova, T S ^b   Tolmachev, V A ^a   Remenyuk, A D ^a   Vij, J ^b   Moore, A ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344080411     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1568458     Document Type: Article

References (11)

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